发明名称 MULTIPLE-STEP ELECTRODEPOSITION PROCESS FOR DIRECT COPPER PLATING ON BARRIER METALS
摘要 <p>Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer.</p>
申请公布号 WO2005008759(A1) 申请公布日期 2005.01.27
申请号 WO2004US21771 申请日期 2004.07.08
申请人 APPLIED MATERIALS, INC.;SUN, ZHI-WEN;HE, RENREN;WANG, YOU;WANG, MICHAEL X. 发明人 SUN, ZHI-WEN;HE, RENREN;WANG, YOU;WANG, MICHAEL X.
分类号 C25D3/38;C25D5/10;C25D7/12;H01L21/288;H01L21/768;(IPC1-7):H01L21/288 主分类号 C25D3/38
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