MULTIPLE-STEP ELECTRODEPOSITION PROCESS FOR DIRECT COPPER PLATING ON BARRIER METALS
摘要
<p>Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer.</p>
申请公布号
WO2005008759(A1)
申请公布日期
2005.01.27
申请号
WO2004US21771
申请日期
2004.07.08
申请人
APPLIED MATERIALS, INC.;SUN, ZHI-WEN;HE, RENREN;WANG, YOU;WANG, MICHAEL X.
发明人
SUN, ZHI-WEN;HE, RENREN;WANG, YOU;WANG, MICHAEL X.