METHOD FOR ESTIMATING PATTERN SHAPE IN CHARGED PARTICLE BEAM EXPOSURE TRANSFER, AND METHOD FOR DETERMINING RETICLE PATTERN USED IN CHARGED PARTICLE BEAM EXPOSURE TRANSFER

摘要

PROBLEM TO BE SOLVED: To provide a method for estimating the pattern shape in a charged particle beam exposure transfer by decreasing the number of repeated calculations of a proximity effect and a blur to be able to shorten the computation time for proximity effect correction.

SOLUTION: An average backward scattering amount is computed for one whole chip for the exposure of each sub-field. When a backward scattering amount in the vicinity of some pattern equals to the average backward scattering amount, the threshold value is determined so that a pattern deformation amount by the proximity effect correction is zero to correct the proximity effect with the use of the threshold value.

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