发明名称 |
Capacitor with enhanced performance and method of manufacture |
摘要 |
A decoupling capacitor is formed in a semiconductor substrate that includes a strained silicon layer. A substantially flat bottom electrode is formed in a portion of the strained silicon layer and a capacitor dielectric overlying the bottom electrode. A substantially flat top electrode overlies said capacitor dielectric. The top electrode is connected to a first reference voltage line and the bottom electrode is connected to a second reference voltage line.
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申请公布号 |
US2005018380(A1) |
申请公布日期 |
2005.01.27 |
申请号 |
US20030627218 |
申请日期 |
2003.07.25 |
申请人 |
YEO YEE-CHIA;HU CHENMING |
发明人 |
YEO YEE-CHIA;HU CHENMING |
分类号 |
H01L21/02;H01L27/08;H01L29/94;(IPC1-7):H01G4/228 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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