METHOD FOR IMPLANTATION THROUGH AN IRREGULAR SURFACE
摘要
The invention relates to a method for implantation in a wafer comprising at least one layer having an irregular surface, whereby the implantation is performed through said irregular surface. The invention is characterised in that a coating step is performed prior to the implantation step, consisting in coating the irregular surface with a coating layer in order to increase the uniformity of the implantation depth.
申请公布号
WO2005008756(A1)
申请公布日期
2005.01.27
申请号
WO2004FR01826
申请日期
2004.07.12
申请人
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;GHYSELEN, BRUNO;AKATSU, TAKESHI;FONTANIERE, RICHARD
发明人
GHYSELEN, BRUNO;AKATSU, TAKESHI;FONTANIERE, RICHARD