发明名称 METHOD FOR IMPLANTATION THROUGH AN IRREGULAR SURFACE
摘要 The invention relates to a method for implantation in a wafer comprising at least one layer having an irregular surface, whereby the implantation is performed through said irregular surface. The invention is characterised in that a coating step is performed prior to the implantation step, consisting in coating the irregular surface with a coating layer in order to increase the uniformity of the implantation depth.
申请公布号 WO2005008756(A1) 申请公布日期 2005.01.27
申请号 WO2004FR01826 申请日期 2004.07.12
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;GHYSELEN, BRUNO;AKATSU, TAKESHI;FONTANIERE, RICHARD 发明人 GHYSELEN, BRUNO;AKATSU, TAKESHI;FONTANIERE, RICHARD
分类号 H01L21/265;H01L21/762 主分类号 H01L21/265
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