Process for preparation of an integrated circuit on an Si substrate with a number of MOS-transistors useful for electronic devices

摘要

Process for preparation of an integrated circuit on an Si substrate, where a number of MOS-transistors are formed and the active regions of these are mutually separated on the Si substrate via field oxide regions. The height of the step between the active regions and the field oxide regions for some of the transistors is decreased with the aid of an additional etching step, in order to form a Corner Device in the step region having a decreased insertion voltage (sic). An independent claim is included for an integrated circuit as described above.