Verfahren zum Zusammenbau eines Halbleiterbauelements und damit hergestellte integrierte Schaltungsanordnung, die für dreidimensionale, mehrschichtige Schaltungen geeignet ist

摘要

A die (5) is prepared on a wafer. A structured support (9) is formed. Its structure (11) is functional in conjunction with the device acting as a sensor or emitter (i.e. of radiation). Wafer and support are joined, with the active sensor- or emitter side of the die facing the support. The die is separated. An Independent claim is included for the corresponding electronic component.