发明名称 Single layer CoTbAg thin films for heat assisted magnetic recording
摘要 The present invention includes that using single layer amorphous CoTbAg thin films as heat assisted magnetic recording (HAMR) media, and the method for producing these CoTbAg amorphous thin films. Co69.48-XTb30.52AgX films with x=0~25.68 at. % are fabricated by DC or RF magnetron sputtering and rotating substrate. Two kinds of targets can be used. One is the CoTbAg alloy target. The other one consists of Co, Tb and Ag three targets. The CoTbAg film is prepared by co-sputtering of Co, Tb and Ag targets. The film composition can be controlled by changing the sputtering power density of each target. CoTbAg films are deposited on glass substrate or nature-oxide silicon wafer at room temperature. These films have high saturation magnetization and high perpendicular coercivity. They have amorphous structure and can be applied to HAMR media.
申请公布号 US2005016836(A1) 申请公布日期 2005.01.27
申请号 US20040891763 申请日期 2004.07.14
申请人 KUO PO-CHENG;CHOU CHUN-YUAN;LEE CHAO-TE;SHEN CHU-LONG;CHANG CHING-RAY 发明人 KUO PO-CHENG;CHOU CHUN-YUAN;LEE CHAO-TE;SHEN CHU-LONG;CHANG CHING-RAY
分类号 C23C14/18;C23C14/32;C23C30/00;G11B5/851;G11B11/105;(IPC1-7):C23C14/32 主分类号 C23C14/18
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