发明名称 Semiconductor device obtained by dividing semiconductor wafer by use of laser dicing technique and method of manufacturing the same
摘要 A semiconductor chip is formed by dividing a semiconductor wafer by use of the laser dicing technique. The semiconductor chip has a laser dicing region on the side surface thereof. A dummy wiring layer is formed along the laser dicing region on the surface layer of the laser dicing region. A laser beam is applied to the dummy wiring layer to divide the semiconductor wafer.
申请公布号 US2005017326(A1) 申请公布日期 2005.01.27
申请号 US20040918412 申请日期 2004.08.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 IIJIMA TOSHITSUNE;SATO NINAO
分类号 H01L21/301;H01L21/78;H01L23/544;H01L23/58;(IPC1-7):H01L21/44;H01L21/48 主分类号 H01L21/301
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