发明名称 |
Semiconductor device obtained by dividing semiconductor wafer by use of laser dicing technique and method of manufacturing the same |
摘要 |
A semiconductor chip is formed by dividing a semiconductor wafer by use of the laser dicing technique. The semiconductor chip has a laser dicing region on the side surface thereof. A dummy wiring layer is formed along the laser dicing region on the surface layer of the laser dicing region. A laser beam is applied to the dummy wiring layer to divide the semiconductor wafer.
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申请公布号 |
US2005017326(A1) |
申请公布日期 |
2005.01.27 |
申请号 |
US20040918412 |
申请日期 |
2004.08.16 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
IIJIMA TOSHITSUNE;SATO NINAO |
分类号 |
H01L21/301;H01L21/78;H01L23/544;H01L23/58;(IPC1-7):H01L21/44;H01L21/48 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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