TFT HAVING GATE INSULATING LAYER WITH ORIENTATION PLANE CAPABLE OF ORIENTATING ORGANIC SEMICONDUCTOR LAYER TO PREDETERMINED DIRECTION, METHOD OF MANUFACTURING TFT, ELECTRONIC CIRCUIT, DISPLAY DEVICE AND ELECTRONIC APPARATUS

摘要

PURPOSE: A TFT(Thin Film Transistor), a method of manufacturing the TFT, an electronic circuit, a display device and an electronic apparatus are provided to obtain a low driving voltage and excellent transistor properties form the TFT by using a gate insulating layer with an orientation plane capable of orientating an organic semiconductor layer to a predetermined direction. CONSTITUTION: A gate electrode(3) is formed under an organic semiconductor layer(7) with a source region(5), a drain region(6) and a channel region(71) between the source and drain regions. A gate insulating layer(4) is interposed between the gate electrode and the organic semiconductor layer. The gate insulating layer includes an orientation plane for orientating the organic semiconductor layer to a predetermined direction.