| 摘要 |
PURPOSE: A method of forming a gate of a semiconductor device is provided to restrain abnormal oxidation of a PVD tungsten silicide layer by forming a PETEOS oxide layer instead of an existing CVD TEOS oxide layer. CONSTITUTION: A gate oxide layer(12), a polysilicon layer(13), and a tungsten silicide layer(14) are formed on an upper surface of a semiconductor substrate(11). A PETEOS oxide layer(15) is formed on an upper surface of the tungsten silicide layer. A gate is formed by etching each predetermined region of the PETEOS layer, the tungsten silicide layer, and the polysilicon layer.
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