STRUCTURE OF METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF TO IMPROVE ELECTRICAL CHARACTERISTIC AND RELIABILITY OF METAL INTERCONNECTION

摘要

PURPOSE: A structure of a metal interconnection of a semiconductor device is provided to improve an electrical characteristic and reliability of a metal interconnection by improving an electromigration characteristic of a metal interconnection structure. CONSTITUTION: The first aluminium layer(14) is formed on an interlayer dielectric(11). A tungsten layer(16) is formed on the first aluminium layer. The second aluminium layer(18) is formed on the tungsten layer. A metal interconnection is composed of the first aluminium layer, the tungsten layer and the second aluminium layer. The thickness of the tungsten layer is 10-20 percent of the whose thickness of a metal interconnection.