发明名称 |
INTEGRATED ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide an integrated electronic device wherein the system is constructed by integrating a micron-rule or submicron-rule functional device structure on a system substrate, and to provide a method for manufacturing the same. SOLUTION: A functional device manufactured on a substrate in a first process and having a plurality of input/output electrodes comprises a functional structure 21 formed separate from the substrate, a region 13 for mounting a functional structure 21; a substrate structure 10 manufactured in a second process and having a plurality of input/out electrodes to be connected to another plurality of input/output electrodes; and wires deposited by beam excited reaction for connecting the plurality of input/output electrodes of the substrate structure 10 and the plurality of corresponding input/output electrodes of the functional structure 21. The functional structure 21 is so designed that step formation is suppressed along the routes of the wires. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005026609(A) |
申请公布日期 |
2005.01.27 |
申请号 |
JP20030270389 |
申请日期 |
2003.07.02 |
申请人 |
NIPPON TELEGR & TELEPH CORP |
发明人 |
NAGASE MASAO;IKUTSU HIDEO |
分类号 |
G01Q70/10;G01Q70/16;G01Q90/00;H01L21/60;H01L25/065;H01L25/07;H01L25/18;H01L27/00;(IPC1-7):H01L27/00;G01N13/10 |
主分类号 |
G01Q70/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|