| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a damascene gate or a replaced gate, wherein the uneven gate pattern density is small, and in a CMP process of exposing the upper surface of a dummy gate, dishing does not occur. SOLUTION: In the semiconductor device having the damascene gate or the replaced gate, a dummy gate 12a is additionally disposed at a position 14 except the gate formed position, whereby the uneven gate pattern density is reduced. Alternatively, the electrode of an interface transistor or an analog circuit capacitance is disposed in place of the dummy gate 12a, whereby the uneven gate pattern density is reduced. COPYRIGHT: (C)2005,JPO&NCIPI |
