发明名称 Mass memory device based on a flash memory with multiple buffers
摘要 The mass memory device includes a flash memory (205) having a plurality of physical sectors, suitable to be erased individually, each one including a plurality of physical blocks and a method for emulating a random-access logical memory space having a plurality of logical sectors each one including a plurality of logical blocks, the logical sectors being grouped into at least one group. The method includes partitioning a random-access logical memory space into a plurality of logical sectors each one including a plurality of logical blocks, the logical sectors being grouped into at least one group of logical sectors; associating a corresponding data physical sector with each of the logical sectors and associating a plurality of corresponding buffer physical sectors with each group of logical sectors; setting at least one of the buffer physical sectors as an active buffer physical sector; writing each of the logical blocks into one of an available physical block of the corresponding data physical sector if the corresponding data physical sector is not full; and the corresponding active buffer physical sector if the corresponding data physical sector is full; setting another buffer physical sector as active, in response to the active buffer physical sector becoming full; and defragging each data physical sector which is full and associated with a logical sector having at least one logical block stored in the corresponding buffer physical sector which is full.
申请公布号 US2005021904(A1) 申请公布日期 2005.01.27
申请号 US20040861341 申请日期 2004.06.04
申请人 STMICROELECTRONICS S.R.L. 发明人 IACULO MASSIMO;GUIDA NICOLA;POLLIO ANTONINO;DELLAMONICA ANGELO;BAGGI PIETRO;GHEZZI STEFANO
分类号 G06F12/02;G06F12/08;(IPC1-7):G06F12/08 主分类号 G06F12/02
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