发明名称 |
System and method for dry chamber temperature control |
摘要 |
A system and method which is capable of compensating for unintended elevations in process temperatures induced in a substrate during a semiconductor fabrication process in order to reduce or eliminate disparities in critical dimensions of device features. The system may be a plasma etching system comprising a process chamber containing an electrostatic chuck (ESC) for supporting a wafer substrate. A chiller outside the process chamber includes a main coolant chamber, which contains a main coolant fluid, as well as an compensation coolant chamber, which contains an compensation coolant fluid. A main circulation loop normally circulates the main coolant fluid from the main coolant chamber through the electrostatic chuck to maintain the chuck at a desired set point temperature.
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申请公布号 |
US2005016467(A1) |
申请公布日期 |
2005.01.27 |
申请号 |
US20030626998 |
申请日期 |
2003.07.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HSIAO YI-LI;ZHOU MEI-SHENG;PENG CHIN-HSIN;HUANG CHIEN-LING;CHEN TSE-YI;LEE CHUN-YI;WU HSUEH-CHANG |
分类号 |
C23C16/00;H01L21/00;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/00 |
代理机构 |
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主权项 |
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地址 |
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