发明名称 |
A METHOD AND SYSTEM FOR ETCHING HIGH-K DIELECTRIC MATERIALS |
摘要 |
A system and a method to remove a layer of high-k dielectric material during the manufacturing of an integrated circuit. In one embodiment of the invention, an etch reactant is employed to form volatile etch products when reacted with high-k layers. Alternately, high-k layers can be anisotropically etched of in accordance with a patterned photoresist or hard mask, where a hyperthermal beam of neutral atoms is used to aid in the reaction of an etch reactant with a high-k layer. Alternately, a hyperthermal beam of neutral atoms or a plasma treatment can used to modify a high-k layer, and subsequently etch the modified high-k layer utilizing an etch reactant that reacts with the modified high-k layer. In still another embodiment of the invention, the hyperthermal beam of neutral atoms is used to etch a high-k layer through physical bombardment of the high-k layer. |
申请公布号 |
WO2004030049(A3) |
申请公布日期 |
2005.01.27 |
申请号 |
WO2003US29978 |
申请日期 |
2003.09.25 |
申请人 |
TOKYO ELECTRON LIMITED;CHEN, LEE;LUDVIKSSON, AUDUNN |
发明人 |
CHEN, LEE;LUDVIKSSON, AUDUNN |
分类号 |
B44C1/22;C03C15/00;C23F1/00;H01L21/00;H01L21/311;H01L21/461;H01L29/51 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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