| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device of forming a hard film only by ions in plasma, more concretely, to provide a method and a device of forming a hard carbon film. SOLUTION: As for the method of forming a film, in a plasma CVD (Chemical Vapor Deposition) method wherein a raw material is decomposed, and a film is formed from the decomposed product, a shelter is arranged between a plasma source and a substrate, and the shelter is a first magnet. COPYRIGHT: (C)2005,JPO&NCIPI
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