| 发明名称 |
Method for surface treating a semiconductor |
| 摘要 |
The invention relates to a method for the thermal treatment of a surface layer (4) on a semiconductor substrate (5). Laser pulses (2) generated by a laser (1) are emitted onto the surface layer (4). This method can be used to produce, in particular, ohmic contacts to III-V compound semiconductors.
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| 申请公布号 |
US2005020095(A1) |
申请公布日期 |
2005.01.27 |
| 申请号 |
US20040487577 |
申请日期 |
2004.08.23 |
| 申请人 |
BAUR JOHANNES;BRUDERL GEORG;LELL ALFRED;NEU WALTER;OBERSCHMID RAIMUND |
发明人 |
BAUR JOHANNES;BRUDERL GEORG;LELL ALFRED;NEU WALTER;OBERSCHMID RAIMUND |
| 分类号 |
H01L21/28;H01L21/268;H01L21/324;(IPC1-7):H01L21/26;H01L21/00;H01L21/84 |
主分类号 |
H01L21/28 |
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