发明名称 |
Photomask blank substrate, photomask blank and photomask |
摘要 |
In a quadrangular photomask blank substrate with a length on each side of at least 6 inches, which has a pair of strip-like regions that extend from 2 to 10 mm inside each of a pair of opposing sides along an outer periphery of a substrate top surface, with a 2 mm edge portion excluded at each end, each strip-like region is inclined downward toward the outer periphery of the substrate, and a difference between maximum and minimum values for height from a least squares plane for the strip-like region to the strip-like region is at most 0.5 mum. The substrate exhibits a good surface flatness at the time of wafer exposure.
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申请公布号 |
US2005019677(A1) |
申请公布日期 |
2005.01.27 |
申请号 |
US20040896970 |
申请日期 |
2004.07.23 |
申请人 |
NAKATSU MASAYUKI;NUMANAMI TSUNEO;MOGI MASAYUKI;ITOH MASAMITSU;HAGIWARA TSUNEYUKI;KONDO NAOTO |
发明人 |
NAKATSU MASAYUKI;NUMANAMI TSUNEO;MOGI MASAYUKI;ITOH MASAMITSU;HAGIWARA TSUNEYUKI;KONDO NAOTO |
分类号 |
G03F1/08;B32B9/00;B32B17/06;G03F1/00;G03F1/14;G03F1/60;G03F9/00;(IPC1-7):B32B9/00 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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