发明名称 Photomask blank substrate, photomask blank and photomask
摘要 In a quadrangular photomask blank substrate with a length on each side of at least 6 inches, which has a pair of strip-like regions that extend from 2 to 10 mm inside each of a pair of opposing sides along an outer periphery of a substrate top surface, with a 2 mm edge portion excluded at each end, each strip-like region is inclined downward toward the outer periphery of the substrate, and a difference between maximum and minimum values for height from a least squares plane for the strip-like region to the strip-like region is at most 0.5 mum. The substrate exhibits a good surface flatness at the time of wafer exposure.
申请公布号 US2005019677(A1) 申请公布日期 2005.01.27
申请号 US20040896970 申请日期 2004.07.23
申请人 NAKATSU MASAYUKI;NUMANAMI TSUNEO;MOGI MASAYUKI;ITOH MASAMITSU;HAGIWARA TSUNEYUKI;KONDO NAOTO 发明人 NAKATSU MASAYUKI;NUMANAMI TSUNEO;MOGI MASAYUKI;ITOH MASAMITSU;HAGIWARA TSUNEYUKI;KONDO NAOTO
分类号 G03F1/08;B32B9/00;B32B17/06;G03F1/00;G03F1/14;G03F1/60;G03F9/00;(IPC1-7):B32B9/00 主分类号 G03F1/08
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