发明名称 |
Light emitting diode and method of making the same |
摘要 |
A high reflective and conductive metal substrate instead of a GaAs substrate which is a light absorption substrate is utilized for the light emitting diode. The processes include forming a mirror protection film on the light emitting epi-layers. The mounting between the reflective and conductive metal substrate on the protection film is though a metal adhesive layer. Afterward, the temporal GaAs substrate is removed. Thereafter, a trench is formed to remove a portion of light emitting epi-layers to expose a p-type ohmic contact epi-layer and the first ohmic contact metal electrode of the light emitting epi-layers. Then the second ohmic contact metal electrode and a wire bonding layer formation are followed. The LED can enhance capability of the light reflect instead of light absorption.
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申请公布号 |
US2005017254(A1) |
申请公布日期 |
2005.01.27 |
申请号 |
US20040921926 |
申请日期 |
2004.08.20 |
申请人 |
UNITED EPITAXY CO., LTD. |
发明人 |
LIN JIN-YWAN;HUANG HUAN-PIN;TU CHUNG-CHENG |
分类号 |
H01L33/00;H01L33/38;H01L33/40;H01L33/64;(IPC1-7):H01L27/15 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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