发明名称 |
MASK WITH DIFFERENT LAYERS OVERLAID WITH EACH OTHER AND METHOD OF DESIGNING THE SAME FOR OBTAINING THE SAME CD AS DESIGN RULE FROM REAL PATTERN IN POLY/ACTIVE OVERLAID PORTION |
摘要 |
PURPOSE: A mask with different layers overlaid with each other and a method of designing the same are provided to obtain the same CD(Critical Dimension) as a design rule from a real pattern in a poly/active overlaid portion by forming selectively an auxiliary pattern on the poly/active overlaid portion. CONSTITUTION: A poly layer(100) is overlaid on an active layer(200). An optical proximity correction pattern is formed on the poly layer. A first pattern for compensating initial bias is formed along a lower line of the active layer. A second pattern for allocating new bias is formed under the active layer to a poly layer formed direction. A third pattern for allocating new bias is formed on the poly layer to an active layer formed direction. A horizontal and vertical pattern(10,20) are decisively defined.
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申请公布号 |
KR20050010392(A) |
申请公布日期 |
2005.01.27 |
申请号 |
KR20030049623 |
申请日期 |
2003.07.21 |
申请人 |
DONGBUANAM SEMICONDUCTOR INC. |
发明人 |
LEE, JUN SEOK |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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