Method for the manufacture of a metal oxide or nitride powder or a semiconductor oxide or nitride powder, an oxide or nitride powder made thereby, and solids and uses thereof

摘要

A method is provided for the production of a oxide or nitride in a nanostructure with a high electric conductivity, for example indium-tin-oxide or aluminum nitride. The method produces an oxide or nitride powder useful to form a solid, which can be used as a sputter target. The oxide or nitride is produced by a synthesis reaction while the liquid alloy is sputtered in a very hot plasma. The synthesis reaction is initiated at a very high temperature, followed by a thermal state that is controlled such that it yields a crystalline structure, which is free from any defects and permits a high mobility of electric charges.