发明名称 METHODS FOR MAKING LOW SILICON CONTENT Ni-Si SPUTTERING TARGETS AND TARGETS MADE THEREBY
摘要 A method for making nickel/silicon sputter targets, targets made thereby and sputtering processes using such targets. Molten nickel is blended with sufficient molten silicon and cast to form an alloy containing trace amounts, up to less than 4.39 wt% silicon, and preferably 2.0 wt% silicon. Preferably, the cast ingot is then shaped by rolling it to form a plate having a desired thickness. Sputter targets so formed are capable of use in conventional magnetron sputter processes, such that a target can be positioned near a cathode in the presence of an electric potential difference and a magnetic field in order to induce sputtering of nickel ions from the sputter target onto the substrate.
申请公布号 WO2004099458(A3) 申请公布日期 2005.01.27
申请号 WO2004US13168 申请日期 2004.04.29
申请人 TOSOH SMD, INC.;IVANOV, EUGENE, Y. 发明人 IVANOV, EUGENE, Y.
分类号 C22C19/03;C23C;C23C14/34;H01F1/14 主分类号 C22C19/03
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