发明名称 |
SEMICONDUCTING ISLAND AS ACTIVE LAYER IN FET |
摘要 |
A method for forming an electronic device including at least one electrically conductive and one semiconductive material deposited from solution, the method comprising: forming on the substrate a confinement structure consisting of a least a first zone and a second zone, depositing the electrically conductive material on the substrate, wherein the electrically conductive material is absent from both the first and second zone, and subsequently depositing the electrically semiconductive material from solution, wherein the semiconductive material is absent from the first zone, but not from the second zone. |
申请公布号 |
WO2004066477(A3) |
申请公布日期 |
2005.01.27 |
申请号 |
WO2004GB00161 |
申请日期 |
2004.01.19 |
申请人 |
PLASTIC LOGIC LIMITED;SIRRINGHAUS, HENNING;RAMSDALE, CATHERINE |
发明人 |
SIRRINGHAUS, HENNING;RAMSDALE, CATHERINE |
分类号 |
H01L23/00;H01L51/00;H01L51/40 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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