| 摘要 |
FIELD: semiconductor engineering. ^ SUBSTANCE: proposed method used for producing super-thin semiconductor structures whose substrate is about 6 to 50 mum thick includes formation of at least two structures on semiconductor wafer bearing separation reference marks spaced Sp apart; manufacture of structure carriers in the form of rings and inserts disposed inside carriers; their attachment to carrier; structure thinning to desired definite thickness of non-working side by mechanical treatment, and wafer cutting along reference marks into structure-bearing blanks, structure carriers having outer diameter Dout <= Sp, m and inner diameter Din = (1.05 ... 1.5) (a2 + b2)1/2, where a and b are structure sizes, m; wafer cutting along reference marks into structure-bearing blanks; calibration of the latter to diameter equal to outer diameter of annular carrier, whereupon working side of structure-bearing blank is attached to carrier with insert followed by equalizing thicknesses of carrier and insert; then structures are thinned by mechanical treatment and polishing etching, and inserts are removed. ^ EFFECT: enhanced quality and precision of semiconductor structure treatment. ^ 1 cl, 5 dwg |
