| 摘要 |
PURPOSE: A CMP(chemical mechanical polishing) method of a metal layer is provided to guarantee reliability of a CMP process by preventing scratch from being formed on the surface of a polishing target layer. CONSTITUTION: A predetermined thickness of a metal layer formed on a wafer is eliminated by a chemical reaction caused by slurry with hydrogen ion concentration of 2-3 and a mechanical process using a polishing pad. A buffing process is performed to remove the slurry remaining on the surface of the metal layer. A cleaning process is performed to eliminate the particles and residue on the surface of the metal layer. The buffing process is performed by using a solution having hydrogen ion concentration similar to that of the slurry used in the polishing process.
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