METHOD FOR FORMING MIM CAPACITOR BY DAMASCENE PROCESS TO PREVENT UPPER AND LOWER METAL LAYERS FROM BEING SHORT-CIRCUITED AND CONTROL GENERATION OF LEAKAGE CURRENT

摘要

PURPOSE: A method for forming an MIM(metal insulator metal) capacitor by a damascene process is provided to prevent upper and lower metal layers from being short-circuited and control generation of a leakage current by depositing a compound made of a metal component on the sidewall of an insulator such that the metal component is formed by etching the upper metal layer. CONSTITUTION: The first IMD(intermetal dielectric)(102) is patterned to be predetermined type on an underlying substrate(100). After a patterning process is performed by using the patterned first IMD layer as a mask, a lower metal layer(106) is deposited. The lower metal layer is planarized by a CMP(chemical mechanical polishing) process. An insulation layer(108) and the second IMD layer(110) are sequentially deposited. A patterned photoresist layer of a predetermined type is deposited on the second IMD layer. By using the patterned photoresist layer as a mask, the second IMD layer is etched until the upper surface of the insulation layer is exposed. After an upper metal layer(114) is deposited, the upper metal layer is planarized by a CMP process. The third IMD layer(116) is formed on the planarized upper metal layer and the second IMD layer. A contact hole(120) is formed to electrically connect the upper metal layer with the lower metal layer.