METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO CONTROL GENERATION OF METALLIC POLYMER CAUSED BY LOSS OF UPPER ELECTRODE IN ETCH PROCESS OF INSULATION LAYER AND PREVENT BRIDGE BETWEEN UPPER AND LOWER ELECTRODES OF CAPACITOR OF MIM STRUCTURE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent a bridge between upper and lower electrodes of a capacitor of a MIM(metal insulator metal) structure, by forming the insulation layer on a lower metal interconnection, by forming the same tungsten plug in an MIM part as in a lower metal interconnection part, and by using the tungsten plug as the upper electrode of the MIM capacitor. CONSTITUTION: A semiconductor substrate(10) is prepared which includes an MIM part for forming a capacitor of an MIM structure and a lower metal interconnection part for forming a lower metal interconnection(14). A metal layer, an ARC(anti-reflective coating)(16) and an insulation layer(18) are sequentially deposited on the substrate. A patterning process is performed to leave the insulation layer only in the MIM part by an etch process using the first photoresist pattern. The metal layer is patterned by an etch process so that a lower electrode is formed in the MIM part and a lower metal interconnection is formed in the lower metal interconnection part. An interlayer dielectric(24) is deposited and patterned by an etch process using the third photoresist pattern to expose the insulation layer to the MIM part and to expose the ARC to the lower metal interconnection part so that a contact hole is formed. A metal material is deposited to gap-fill the contact hole and is planarized to form an upper electrode in the MIM part and to form a metal plug(30) in the lower metal interconnection part.