| 摘要 |
The invention relates to a method of manufacturing a semiconductor device ( 10 ), whereby an electric element ( 11 ) is attached on or above a carrier plate ( 4 ) which comprises a first layer ( 5 ) of a first material and a second layer ( 2 ) of a second material which differs from the first, which is electrically conducting, which has a smaller thickness than the first layer ( 5 ), and in which a cavity ( 6 ) is formed that extends at least to the first layer ( 5 ). The element ( 11 ) is electrically connected to parts ( 2 ) of the carrier plate ( 4 ) at first connection regions ( 1 ), and an encapsulation is deposited around the element ( 11 ) and in the cavity ( 6 ). Then so much of the first layer ( 5 ) of the carrier plate ( 4 ) is removed that the cavity ( 6 ) is reached, whereby second connection conductors ( 2 ) are formed from the remaining portion of the carrier plate ( 4 ). According to the invention, at least one further cavity ( 7 ) is formed in a portion of the carrier plate ( 4 ) surrounded by the cavity ( 6 ) before the encapsulation ( 3 ) is deposited, which further cavity ( 7 ) becomes at least substantially filled with a portion of the encapsulation ( 3 ) during the deposition thereof and, within the second connection regions ( 2 ), separates a portion ( 2 A) thereof from the remaining portion ( 2 B) thereof, the smallest dimension of the portion ( 2 A) being chosen to be smaller than the smallest dimension of the remaining portion ( 2 B) of each second connection region ( 2 ). The portion ( 2 A) may thus be readily provided with solder ( 8 A) having a smaller thickness than the solder ( 8 B) in the remaining portion of the second connection region ( 2 ). This is an advantage, for example in the case of surface mounting of the device ( 10 ). Preferably, the first connection regions ( 1 ) are connected to the portion ( 2 A) of the connection region ( 2 ). |
