发明名称 |
METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE TO EMBODY STABILITY OF DEVICE |
摘要 |
PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to embody stability of a device by preventing a notching phenomenon of a PMOS(p-channel metal oxide semiconductor) gate electrode. CONSTITUTION: A gate oxide layer and an undoped polysilicon layer are formed on a semiconductor substrate(11) in which an NMOS transistor area and a PMOS transistor area are defined. The undoped polysilicon layer in the NMOS transistor area is doped to form a doped polysilicon layer. The doped polysilicon layer in the NMOS transistor area and the undoped polysilicon layer in the PMOS transistor area are patterned by a main etch process using mixture gas of HBr/He-O2. An NMOS gate electrode(140N) and a PMOS gate electrode(140P) are formed by an over-etch process using mixture gas of HBr/N2/He-O2.
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申请公布号 |
KR20050009614(A) |
申请公布日期 |
2005.01.25 |
申请号 |
KR20030049413 |
申请日期 |
2003.07.18 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
KANG, YANG BEOM |
分类号 |
H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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