| 摘要 |
A method for providing a porous organosilica glass (OSG) film that consists of a single phase of a material represented by the formula SivOwCxHyFz, v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6 is disclosed herein. In one aspect of the present invention, the film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or alternatively bonded to, the precursors. The porogens are subsequently removed to provide the porous film. In another aspect of the present invention, porogenated precursors are used for providing the film.
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