METHOD OF FORMING CONTACT USING PLUG IMPLANTATION PROCESS FOR PREVENTING LOSS OF DOPANTS WITHIN SOURCE/DRAIN JUNCTION

摘要

PURPOSE: A method of forming a contact using a plug implantation process is provided to improve a contact resistance characteristic by increasing the amount of dopants activated in a thermal process. CONSTITUTION: An interlayer dielectric(38) is formed on a semiconductor substrate(31) having a p-type source/drain junction. A contact hole(40) is formed within the interlayer dielectric in order to expose a part of the p-type source/drain junction. A barrier metal is formed on the interlayer dielectric. A plug ion implantation region(43) is formed within the p-type source/drain junction by performing a plug ion implantation process. A silicide layer(44) is formed on a boundary between the plug ion implantation region and the barrier metal. An activation process is performed to activate dopants within the plug ion implantation region. A plug(45) is formed to fill the contact hole.