发明名称 |
Semiconductor integrated device including an electrostatic breakdown protection circuit having uniform electrostatic surge response |
摘要 |
A semiconductor integrated device having a source region and a drain region of a first conductive type, a channel region of a second conductive type which is located between the source and drain regions. The channel region having a highly doped impurity region of the second conductive type which is surrounded by a lightly doped impurity region of the second conductive type.
|
申请公布号 |
US6847082(B2) |
申请公布日期 |
2005.01.25 |
申请号 |
US20020160265 |
申请日期 |
2002.06.04 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
ICHIKAWA KENJI |
分类号 |
H01L27/04;H01L21/822;H01L21/8234;H01L23/62;H01L27/01;H01L27/02;H01L27/08;H01L27/088;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|