发明名称 |
Semiconductor device |
摘要 |
In a semiconductor device functioning as a SiGeC-HBT, an emitter/base stacked portion 20 is formed on a Si epitaxially grown layer 2. The emitter/base stacked portion 20 includes: a SiGeC spacer layer 21; a SiGeC core base layer 22 containing boron at a high concentration, a SiGe cap layer 23; a Si cap layer 24, and an emitter layer 25 formed by introducing phosphorus into the Si cap layer 24 and the SiGe cap layer 23.
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申请公布号 |
US6847062(B2) |
申请公布日期 |
2005.01.25 |
申请号 |
US20030413305 |
申请日期 |
2003.04.15 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OHNISHI TERUHITO;YUKI KOICHIRO;SAWADA SHIGEKI;SHIMIZU KEIICHIRO;HASEGAWA KOICHI;SAITOH TOHRU |
分类号 |
H01L21/331;H01L29/737;(IPC1-7):H01L31/032;H01L29/00 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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