发明名称 |
Methods and devices for the suppression of copper hillock formation |
摘要 |
The present invention provides embodiments of methods and devices for the suppression of copper hillocks. Copper hillocks are suppressed by capping the copper layer with a dielectric film before any significant growth of copper hillocks can begin using a ramped temperature dielectric deposition process. Copper hillocks are also suppressed by doping a copper layer with a dopant that will constrain the grain size of the copper during subsequent processing. These methods are applicable to the construction of MIM capacitors and interconnect structures.
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申请公布号 |
US6846752(B2) |
申请公布日期 |
2005.01.25 |
申请号 |
US20030465389 |
申请日期 |
2003.06.18 |
申请人 |
INTEL CORPORATION |
发明人 |
CHAMBERS STEPHEN;LAVRIC DAN S. |
分类号 |
H01L21/31;H01L21/768;H02H3/00;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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