发明名称 Poly(arylene ether) dielectrics
摘要 The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure:wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:
申请公布号 US6846899(B2) 申请公布日期 2005.01.25
申请号 US20020262144 申请日期 2002.10.01
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 LIM CHRISTOPHER;NG SIU CHOON;CHAN HARDY;CHOOI SIMON;ZHOU MEI SHENG
分类号 C08G65/40;H01L21/312;H01L21/768;(IPC1-7):C08G65/00 主分类号 C08G65/40
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