METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO PREVENT ISOLATION LAYER IN FIELD REGION FROM BEING DAMAGED IN ETCHING GATE OXIDE LAYER FOR HIGH VOLTAGE DEVICE IN CORE DEVICE REGION

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent an isolation layer in a field region from being damaged in etching a gate oxide layer for a high voltage device in a core device region, by forming a gate oxide layer for a core device, by protecting the gate oxide layer by a nitride layer and by forming a gate oxide layer for the high voltage device. CONSTITUTION: An isolation layer(112) is formed on a semiconductor substrate(110) in which the first region for forming a high voltage device and the second region for a logic device are defined. A barrier layer(117) for preventing oxidation is formed in the second region. A gate oxide layer(120) for the high voltage device is formed in the first region. The barrier layer in the second region is eliminated. A gate oxide layer(130) for the logic device is formed in the second region by an oxide process.