FLAT DISPLAY DEVICE WITH DRIVING CIRCUIT PARTS AND PIXEL PARTS HAVING DIFFERENT GRAIN SIZE OF POLYCRYSTALLINE SILICON IN THIN FILM TRANSISTORS, AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A flat display device with polycrystalline silicon thin film transistors and fabricating method thereof are provided to differ the grain size of polycrystalline silicon included in active channel areas of same area by differing laser energy radiated to driving circuit parts and pixel parts. CONSTITUTION: A flat display device with polycrystalline silicon thin film transistors includes pixel parts defined by gate and data lines and having thin film transistors(TFTs) driven by signals applied by the gate and data lines, and driving circuit parts respectively connected to the gate and data lines and having TFTs applying signals to the pixel parts. The TFTs of the driving circuit parts have active channel areas formed with polycrystalline silicon, wherein a mean value of polycrystalline silicon grains per unit area is smaller by 1 than that of the pixel parts.