METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH THREE-DIMENSIONAL CYLINDER SURFACE CHANNEL FOR MAXIMIZING SIZE OF CHANNEL REGION

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to maximize the size of a channel region by embodying a cylinder type three-dimensional transistor using an SEG(Selective Epitaxial Growth). CONSTITUTION: Isolation layers(116) are formed on a substrate. A first active region(118) is formed within an NMOS(N channel Metal Oxide Semiconductor) FET(Field Effect Transistor) forming region by using an N+ doped SEG. A second active region is formed within a PMOS(P channel MOS) FET forming region by a P+ doped SEG. A first channel region of the NMOS FET is formed by using an N- doped SEG. A second channel region of the PMOS FET is formed by using a P- doped SEG.