METHOD OF FORMING UNIFORMLY THIN COBALT SILICIDE LAYER WITHOUT SPIKING USING BUFFER LAYER

摘要

PURPOSE: A method is provided to form uniformly a thin cobalt silicide layer without spiking by forming a titanium nitride buffer layer between a cobalt film and a silicon layer. CONSTITUTION: A titanium nitride buffer layer(20) is formed on a silicon layer(10) by using a PVD(Physical Vapor Deposition) and a cobalt film(30) is formed thereon. A capping layer(40) for protecting the cobalt film from oxygen is sequentially deposited thereon. A thin cobalt silicide layer(S2) is uniformly formed on the silicon layer by using two-step heat treatments.