发明名称 |
CONTACT FORMING METHOD FOR PREVENTING METALLIC PART FROM BEING INCOMPLETELY OPENED |
摘要 |
PURPOSE: A contact forming method is provided to prevent a metallic part of an edge region from being incompletely opened due to etch-stop phenomenon in RIE(Reactive Ion Etching) by etching previously an edge of an insulating layer. CONSTITUTION: An edge of a first insulating layer is etched on a substrate by using a first mask as an etching mask. A plurality of contact holes(13) for exposing predetermined metallic parts to the outside are formed in the first insulating layer by using a second mask as an etching mask. Tungsten is filled in the contact holes and etched.
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申请公布号 |
KR20050009351(A) |
申请公布日期 |
2005.01.25 |
申请号 |
KR20030048590 |
申请日期 |
2003.07.16 |
申请人 |
DONGBUANAM SEMICONDUCTOR INC. |
发明人 |
JO, BO YEOUN |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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