发明名称 CONTACT FORMING METHOD FOR PREVENTING METALLIC PART FROM BEING INCOMPLETELY OPENED
摘要 PURPOSE: A contact forming method is provided to prevent a metallic part of an edge region from being incompletely opened due to etch-stop phenomenon in RIE(Reactive Ion Etching) by etching previously an edge of an insulating layer. CONSTITUTION: An edge of a first insulating layer is etched on a substrate by using a first mask as an etching mask. A plurality of contact holes(13) for exposing predetermined metallic parts to the outside are formed in the first insulating layer by using a second mask as an etching mask. Tungsten is filled in the contact holes and etched.
申请公布号 KR20050009351(A) 申请公布日期 2005.01.25
申请号 KR20030048590 申请日期 2003.07.16
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 JO, BO YEOUN
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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