| 发明名称 |
METHOD OF FORMING METAL LINE OF SEMICONDUCTOR DEVICE TO IMPROVE RELIABILITY AND LENGTHEN LIFETIME BY USING POROUS OXIDE LAYER FOR ABSORBING HEAT |
| 摘要 |
PURPOSE: A method of forming a metal line of a semiconductor device is provided to improve reliability and lengthen lifetime by forming an interlayer dielectric with a porous oxide layer to absorb H2O of a gas state. CONSTITUTION: A lower metal line is formed on a semiconductor substrate(21) including an insulating layer(22). An interlayer dielectric(26) is formed on the entire surface of the semiconductor substrate by using a porous oxide layer. A via hole(27) is formed thereon to expose a part of the lower metal line. A plug(28) is formed in the via hole. An upper metal line(29) is formed on the entire surface of the semiconductor substrate.
|
| 申请公布号 |
KR20050009492(A) |
申请公布日期 |
2005.01.25 |
| 申请号 |
KR20030048825 |
申请日期 |
2003.07.16 |
| 申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
CHO, YOUNG A |
| 分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
