METHOD FOR FABRICATING NVM DEVICE TO EASILY FORM CONTROL GATE POLY SPACER AND PREVENT ION IMPLANTATION SHADOW PHENOMENON

摘要

PURPOSE: A method for fabricating an NVM(non-volatile memory) device is provided to easily form a control gate poly spacer and prevent an ion implantation shadow phenomenon by performing an etch-back process instead of a photolithography process in forming a cell control gate pattern. CONSTITUTION: A plurality of STI's(shallow trench isolations) are formed in a silicon substrate(124) to define an active region. A gate oxide layer, a floating gate(122) and a hard mask insulation layer(123) are sequentially formed between the STI's on the silicon substrate. An insulation layer is formed on the active region and a gate insulation layer is formed on a region except the active region. A material to be used as an electrode and photoresist are sequentially deposited. The photoresist is patterned to be a predetermined shape to form a spacer(160,162) on the sidewalls of the gate oxide layer, the floating gate and the hard mask insulation layer while a gate electrode(164) is formed.