| 摘要 |
A semiconductor memory device includes a data line shift circuit, a plurality of data mask lines connected to the plurality of sense amplifier write circuits, respectively, and a plurality of mask circuits. The plurality of mask circuits each include at least one shift switch circuit and supply a mask signal to a sense amplifier write circuit, which is connected to a mask circuit different from that before a data line is shifted by the data line shift circuit, through the shift switch circuit and supply the mask signal to a sense amplifier write circuit, which is connected to the same mask circuit as that before the data line is shifted, not through the shift switch circuit.
|
