METHOD OF FORMING CONTACT PLUG OF SEMICONDUCTOR DEVICE USING ALUMINUM PLUG PROCESS FOR RESTRAINING INCREASE OF RESISTANCE DUE TO COMPOUND GENERATED FROM DIRECT CONTACT BETWEEN WETTING LAYER AND ALUMINUM LAYER

摘要

PURPOSE: A method of forming a contact plug of a semiconductor device using an aluminum plug process is provided to maintain a non-resistance characteristic of an aluminum layer by improving a gap-fill characteristic of a contact hole and restraining reaction between a wetting layer and the aluminum layer on a flat region except for the contact hole. CONSTITUTION: An interlayer dielectric(32) is formed on a lower conductive layer(31). A contact hole(33) for exposing a surface of the lower conductive layer is formed by etching the interlayer dielectric. A wetting layer is formed on a flat region of the interlayer dielectric. A barrier layer is formed on the wetting layer. An aluminum layer is formed on the barrier layer in order to fill the contact hole. The aluminum layer includes a low-temperature aluminum layer(36) and a high-temperature aluminum layer(37).