THIN FILM TRANSISTOR IN ELECTRO-LUMINESCENT DEVICE, ELECTRO-LUMINESCENT DEVICE USING THE SAME, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR FOR IMPROVING IMAGE QUALITY BY MAINTAINING CONSTANT DRIVING CURRENT

摘要

PURPOSE: A thin film transistor in an electro-luminescent device, an electro-luminescent device using the same, and a manufacturing method of the thin film transistor are provided to prevent a degradation of image quality due to change and distortion of a driving current by stabilizing an amount of current flowing through a semiconductor layer. CONSTITUTION: A thin film transistor of an electro-luminescent device includes a first electrode(110), an insulating film(120), a second semiconductor pattern(130), an etch stop layer(140), a second electrode(150), and a third electrode(160). The insulating film on the first electrode insulates the first electrode. The second semiconductor pattern on the insulating film has a resistance which is reduced by a voltage applied to the first electrode. The etch stop layer on the first semiconductor pattern prevents a distortion of a current flowing through the first semiconductor pattern. The second electrode is electrically coupled with the first semiconductor pattern to overlap a first portion of the etch stop layer. The third electrode includes a first terminal overlapped with a second portion of the etch stop layer, and a second terminal arranged at one end of an organic electro-luminescent layer.