Patterned SOI by oxygen implantation and annealing

摘要

Methods for forming a patterned SOI region in a Si-containing substrate are provided which has geometries of about 0.25 mum or less. The methods disclose each utilize a patterned dielectric mask that includes at least one opening having a size of about 0.25 mum or less which exposes a portion of a Si-containing substrate. Oxygen ions are implanted through the opening using at least a base ion implantation process which is carried out at an oxygen beam energy of about 120 keV or less and an oxygen dosage of about 4E17 cm<-2 >or less. These conditions minimize erosion of the vertical edges of the patterned dielectric mask and minimize formation of lateral straggles.