| 发明名称 |
Power MOSFET with ultra-deep base and reduced on resistance |
| 摘要 |
A MOS-gated semiconductor device is shown and described which includes deep implanted junctions and thick oxide spacers disposed over a substantial portion of common conduction regions.
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| 申请公布号 |
US6846706(B2) |
申请公布日期 |
2005.01.25 |
| 申请号 |
US20030644306 |
申请日期 |
2003.08.20 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
SPRING KYLE;CAO JIANJUN |
| 分类号 |
H01L29/423;H01L21/28;H01L21/336;H01L29/06;H01L29/10;H01L29/49;H01L29/78;(IPC1-7):H01L21/332 |
主分类号 |
H01L29/423 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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