| 摘要 |
A method of manufacturing a semiconductor device for realizing a semiconductor device which is suitable for enhancing the operating speed thereof and which is high in quality and reliability is provided. The method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device including a barrier film (7) having a copper diffusion preventive function and formed on a copper-containing metallic wire (9), the method including the steps of: conducting electroplating by use of an electroplating liquid containing a catalyst metal (10) added thereto so as thereby to form the metallic wiring (2) containing the catalyst metal (10); and conducting electroless plating by use of the catalyst metal (10) exposed at the surface of the metallic wiring (2) as a catalyst so as thereby to form the barrier film (7) having the copper diffusion preventive function on the metallic wiring (2). |
