| 摘要 |
PURPOSE: A TFT(Thin Film Transistor) for an AMOLED(Active Matrix type Organic Light Emitting Diode) device is provided to be capable of reducing threshold voltage and increasing the linear region of device characteristics so as to segment section of output voltage according to input voltage. CONSTITUTION: An AMOLED device includes a top gate type polysilicon TFT, wherein the TFT uses a gate electrode as an ion stop layer. The TFT is provided with a semiconductor layer(110) made of polysilicon having a source and drain region at both side portions, a trapezium type gate electrode(112) is crossed in the center portion of the semiconductor layer(110), and a channel(CH) formed at a crossed portion between the gate electrode(112) and the semiconductor layer(110). Preferably, the upper portion of the channel is shorter than the lower portion of the channel.
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